مورد إلكتروني
Strain and Quantum Dots Manipulation in Nitride Compounds for Opto-electronic Devices
| العنوان: | Strain and Quantum Dots Manipulation in Nitride Compounds for Opto-electronic Devices |
|---|---|
| المصدر: | DTIC |
| بيانات النشر: | 2008-02-15 |
| تفاصيل مُضافة: | NORTH CAROLINA STATE UNIV AT RALEIGH OFFICE OF CONTRACTS AND GRANTS Bedair, S. M. El-Masry, N. A. |
| نوع الوثيقة: | Electronic Resource |
| مستخلص: | Activities during the project period can be divided into two main areas. The first dealt with quantum structure and optical properties of light sources based on GaInN/AlInGaN quantum well structures. The second area covered research in the room temperature ferromagnetic properties of GaMnN dilute magnetic semiconductors. Proposal no. 44409EL. |
| مصطلحات الفهرس: | Inorganic Chemistry, Electrical and Electronic Equipment, Electrooptical and Optoelectronic Devices, Quantum Theory and Relativity, OPTICAL PROPERTIES, ELECTROOPTICS, NITRIDES, SEMICONDUCTORS, FERROMAGNETIC MATERIALS, FERROMAGNETISM, ROOM TEMPERATURE, LIGHT SOURCES, DILUTION, QUANTUM WELLS, QUANTUM THEORY, NITRIDE COMPOUNDS, MAGNETIC SEMICONDUCTORS, OPTOELECTRONIC DEVICES, QUANTUM WELL STRUCTURES, PE61102A, Text |
| URL: | |
| الإتاحة: | Open access content. Open access content Approved for public release; distribution is unlimited. |
| ملاحظة: | text/html English |
| أرقام أخرى: | DTICE ADA482351 832032952 |
| المصدر المساهم: | From OAIster®, provided by the OCLC Cooperative. |
| رقم الأكسشن: | edsoai.ocn832032952 |
| قاعدة البيانات: | OAIster |
| الوصف غير متاح. |