مورد إلكتروني
Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module
| العنوان: | Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module |
|---|---|
| المصدر: | DTIC |
| بيانات النشر: | 2015-02 |
| تفاصيل مُضافة: | ARMY RESEARCH LAB ADELPHI MD Ovrebo, Gregory K |
| نوع الوثيقة: | Electronic Resource |
| مستخلص: | A simulation was performed to predict the thermal behavior of a commercial power module with silicon insulated gate bipolar transistors (IGBTs) during switching of multiple power pulses. The original document contains color images. |
| مصطلحات الفهرس: | Electrical and Electronic Equipment, Thermodynamics, BIPOLAR TRANSISTORS, PULSES, THERMAL PROPERTIES, COMMERCE, GATES(CIRCUITS), INSULATION, MODULAR CONSTRUCTION, POWER, SIMULATION, SWITCHING, THERMAL RADIATION, Text |
| URL: | |
| الإتاحة: | Open access content. Open access content Approved for public release; distribution is unlimited. |
| ملاحظة: | text/html English |
| أرقام أخرى: | DTICE ADA616757 913598722 |
| المصدر المساهم: | From OAIster®, provided by the OCLC Cooperative. |
| رقم الأكسشن: | edsoai.ocn913598722 |
| قاعدة البيانات: | OAIster |
| الوصف غير متاح. |