مورد إلكتروني
Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module
العنوان: | Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module |
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المصدر: | DTIC |
بيانات النشر: | 2015-02 |
تفاصيل مُضافة: | ARMY RESEARCH LAB ADELPHI MD Ovrebo, Gregory K |
نوع الوثيقة: | Electronic Resource |
مستخلص: | A simulation was performed to predict the thermal behavior of a commercial power module with silicon insulated gate bipolar transistors (IGBTs) during switching of multiple power pulses. The original document contains color images. |
مصطلحات الفهرس: | Electrical and Electronic Equipment, Thermodynamics, BIPOLAR TRANSISTORS, PULSES, THERMAL PROPERTIES, COMMERCE, GATES(CIRCUITS), INSULATION, MODULAR CONSTRUCTION, POWER, SIMULATION, SWITCHING, THERMAL RADIATION, Text |
URL: | |
الإتاحة: | Open access content. Open access content Approved for public release; distribution is unlimited. |
ملاحظة: | text/html English |
أرقام أخرى: | DTICE ADA616757 913598722 |
المصدر المساهم: | From OAIster®, provided by the OCLC Cooperative. |
رقم الأكسشن: | edsoai.ocn913598722 |
قاعدة البيانات: | OAIster |
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