دورية أكاديمية
Quantitative Scanning Transmission Electron Microscopy–High-Angle-Annular Dark-Field Study of the Structure of Pseudo-2D Sb2Te3 Films Grown by (Quasi) Van der Waals Epitaxy
| العنوان: | Quantitative Scanning Transmission Electron Microscopy–High-Angle-Annular Dark-Field Study of the Structure of Pseudo-2D Sb2Te3 Films Grown by (Quasi) Van der Waals Epitaxy |
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| المؤلفون: | Sever, Vitomir, Bernier, Nicolas, Térébénec, Damien, Sabbione, Chiara, Paterson, Jessy, Castioni, Florian, Quéméré, Patrick, Jannaud, Audrey, Rouvière, Jean-Luc, Roussel, Hervé, Raty, Jean-Yves, Hippert, Françoise, Noé, Pierre |
| المصدر: | Physica Status Solidi. Rapid Research Letters (2024) |
| بيانات النشر: | John Wiley and Sons Inc, 2024. |
| سنة النشر: | 2024 |
| مصطلحات موضوعية: | chalcogenide phase-change materials, composition analyses, lattice parameters, Python libraries, Sb2Te3, scanning transmission electron microscopy–high-angle-annular dark-field images, thermal vibrations, Chalcogenide phase-change material, Composition analysis, High-angle annular dark-field images, Pseudo-2D, Python library, Scanning transmission electron microscopy, Scanning transmission electron microscopy–high-angle-annular dark-field image, Thermal vibration, Van der Waal, Van der Waals epitaxy, Materials Science (all), Condensed Matter Physics, General Materials Science, Physical, chemical, mathematical & earth Sciences, Physics, Physique, chimie, mathématiques & sciences de la terre, Physique |
| الوصف: | Scanning transmission electron microscopy (STEM) techniques are used to improve the understanding of out-of-plane oriented Sb2Te3 thin films deposited by sputtering on SiO2 and Si substrates. Nanobeam precession electron diffraction, energy-dispersive X-ray spectroscopy, and high-angle-annular dark-field imaging show that the presence of 1–2 atomic planes of Te on top of the substrate is a crucial factor for successful growth of such films, which can be achieved by optimizing cosputtering of Te and Sb2Te3 targets. The formation of an actual van der Waals (vdW) gap between the substrate and the first Sb2Te3 quintuple layer allows for vdW epitaxy. This gap is larger than those separating Te planes in the pseudo-2D Sb2Te3 structure. HAADF image analysis provides detailed information on the atomic arrangement such as interplanar distances, vdW gaps, and Debye–Waller coefficients, all these with a few pm precision. For the anisotropic atomic displacements, a new methodology is introduced based on the statistical analysis of atomic column positions that provides information on the low-frequency phonon modes. Ab initio calculations are used to support our results. Overall, this study provides quantitative STEM tools particularly well suited for nonperiodic pseudo-2D materials, such as Sb2Te3/GeTe superlattices. |
| نوع الوثيقة: | journal article http://purl.org/coar/resource_type/c_6501 article peer reviewed |
| اللغة: | English |
| Relation: | https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202300402; urn:issn:1862-6254; urn:issn:1862-6270 |
| DOI: | 10.1002/pssr.202300402 |
| URL الوصول: | https://orbi.uliege.be/handle/2268/313612 |
| حقوق: | open access http://purl.org/coar/access_right/c_abf2 info:eu-repo/semantics/openAccess |
| رقم الأكسشن: | edsorb.313612 |
| قاعدة البيانات: | ORBi |
| DOI: | 10.1002/pssr.202300402 |
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