التفاصيل البيبلوغرافية
| العنوان: |
Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip |
| المؤلفون: |
Shubhangi Bhadoria, Frans Dijkhuizen, Xu Zhang, Li Ran, Hans-Peter Nee |
| المصدر: |
MDPI, Energies. 17(2):1-21 |
| سنة النشر: |
2024 |
| الوصف: |
An increasing share of fluctuating and intermittent renewable energy sources can cause over-currents (OCs) in the power system. The heat generated during OCs increases the junction temperature of semiconductor devices and could even lead to thermal runaway if thermal limits are reached. In order to keep the junction temperature within the thermal limit of the semiconductor, the power module structure with heat-absorbing material below the chip is investigated through COMSOL Multiphysics simulations. The upper limits of the junction temperature for Silicon (Si) and Silicon Carbide (SiC) are assumed to be 175 and 250 ∘ C, respectively. The heat-absorbing materials considered for analysis are a copper block and a copper block with phase change materials (PCMs). Two times, three times, and four times of OCs would be discussed for durations of a few hundred milliseconds and seconds. This article also discusses the thermal performance of a copper block and a copper block with PCMs. PCMs used for Si and SiC are LM108 and Lithium, respectively. It is concluded that the copper block just below the semiconductor chip would enable OC capability in Si and SiC devices and would be more convenient to manufacture as compared to the copper block with PCM. |
| نوع الوثيقة: |
redif-article |
| اللغة: |
English |
| الإتاحة: |
https://ideas.repec.org/a/gam/jeners/v17y2024i2p462-d1321224.html |
| رقم الأكسشن: |
edsrep.a.gam.jeners.v17y2024i2p462.d1321224 |
| قاعدة البيانات: |
RePEc |
