دورية أكاديمية
Investigation of Single Event Transient Induced by Process Variability in 14 nm High-k/Metal Gate SOI FinFET Devices
| العنوان: | Investigation of Single Event Transient Induced by Process Variability in 14 nm High-k/Metal Gate SOI FinFET Devices |
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| المؤلفون: | Liu, BaojunAff1, IDs1263302202102x_cor1, Li, Chuang, Chen, Minghua |
| المصدر: | Silicon. 15(3):1317-1324 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 1876990X 18769918 |
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| DOI: | 10.1007/s12633-022-02102-x |