دورية أكاديمية
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy
| العنوان: | Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |
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| المؤلفون: | Gagis, G. S.Aff1, Levin, R. V., Marichev, A. E., Pushnyi, B. V., Scheglov, M. P., Ber, B. Ya., Kazantsev, D. Yu., Kudriavtsev, Yu. A., Vlasov, A. S., Popova, T. B., Chistyakov, D. V., Kuchinskii, V. I.Aff1, Aff2, Vasil’ev, V. I. |
| المصدر: | Semiconductors. 53(11):1472-1478 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 10637826 10906479 |
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| DOI: | 10.1134/s106378261911006x |