دورية أكاديمية

Investigation of Characteristics of Al2O3/n-In x Ga1−x As (x = 0.53, 0.7, and 1) Metal–Oxide–Semiconductor Structures

التفاصيل البيبلوغرافية
العنوان: Investigation of Characteristics of Al2O3/n-In x Ga1−x As (x = 0.53, 0.7, and 1) Metal–Oxide–Semiconductor Structures
المؤلفون: Trinh, Hai-Dang, Lin, Yueh-Chin, Kuo, Chien-I, Chang, Edward Yi, Nguyen, Hong-Quan, Wong, Yuen-Yee, Yu, Chih-Chieh, Chen, Chi-Ming, Chang, Chia-Yuan, Wu, Jyun-Yi, Chiu, Han-Chin, Yu, Terrence, Chang, Hui-Cheng, Tsai, Joseph, Hwang, David
المصدر: Journal of Electronic Materials. August 2013 42(8):2439-2444
قاعدة البيانات: Springer Nature Journals
الوصف
تدمد:03615235
1543186X
DOI:10.1007/s11664-013-2616-x