دورية أكاديمية
Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Doping-Free GaN Cap
| العنوان: | Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Doping-Free GaN Cap |
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| المؤلفون: | Wang, YuhaoAff1, Aff2, Huang, SenAff1, Aff2, IDs1166402411156z_cor2, Jiang, QimengAff1, Aff2, IDs1166402411156z_cor3, Wang, XinhuaAff1, Aff2, Guo, FuqiangAff1, Aff2, Feng, ChaoAff1, Aff2, Fan, JieAff1, Aff2, Yin, HaiboAff1, Aff2, Gao, XinguoAff1, Aff2, Wei, KeAff1, Aff2, Zheng, YingkuiAff1, Aff2, Liu, XinyuAff1, Aff2 |
| المصدر: | Journal of Electronic Materials. 53(7):3926-3932 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 03615235 1543186X |
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| DOI: | 10.1007/s11664-024-11156-z |