دورية أكاديمية
Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point
العنوان: | Temperature-Dependent Photoluminescence Studies of Ge |
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المؤلفون: | Ryu, Mee-YiAff1, Harris, Thomas R., Wang, Buguo, Yeo, Yung Kee, Hogsed, Michael R., Lee, Sang Jo, Kim, Jong Su, Kouvetakis, John |
المصدر: | Journal of the Korean Physical Society. 75(8):577-585 |
قاعدة البيانات: | Springer Nature Journals |
تدمد: | 03744884 19768524 |
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DOI: | 10.3938/jkps.75.577 |