دورية أكاديمية

Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point

التفاصيل البيبلوغرافية
العنوان: Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point
المؤلفون: Ryu, Mee-YiAff1, Harris, Thomas R., Wang, Buguo, Yeo, Yung Kee, Hogsed, Michael R., Lee, Sang Jo, Kim, Jong Su, Kouvetakis, John
المصدر: Journal of the Korean Physical Society. 75(8):577-585
قاعدة البيانات: Springer Nature Journals
الوصف
تدمد:03744884
19768524
DOI:10.3938/jkps.75.577