دورية أكاديمية
Introducing a buried pure silicon layer in SOI-MESFET transistor to increase the breakdown voltage by modifying carriers and electric field distribution
| العنوان: | Introducing a buried pure silicon layer in SOI-MESFET transistor to increase the breakdown voltage by modifying carriers and electric field distribution |
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| المؤلفون: | Pu, Li, Yan, LiuAff2, IDs42247023004716_cor2, Hanlei, Wang |
| المصدر: | Emergent Materials. 6(2):691-697 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. | تدمد: | 25225731 2522574X |
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| DOI: | 10.1007/s42247-023-00471-6 |