دورية أكاديمية
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
| العنوان: | Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact |
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| المؤلفون: | Jung, Hyun-WookAff1, Chang, Sung-Jae, Ahn, Ho-Kyun, Kim, Haecheon, Lim, Jong-Won, Do, Jae-Won |
| المصدر: | Journal of the Korean Physical Society. 76(9):837-842 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 03744884 19768524 |
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| DOI: | 10.3938/jkps.76.837 |