دورية أكاديمية
A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications
| العنوان: | A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications |
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| المؤلفون: | Deshpande, Gauri, Bhattacharya, Sandip, Ajayan, J.Aff1, IDs11664024111778_cor3, Mounika, B., Nirmal, D. |
| المصدر: | Journal of Electronic Materials. 53(8):4287-4307 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 03615235 1543186X |
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| DOI: | 10.1007/s11664-024-11177-8 |