دورية أكاديمية
Investigation of Power IR (850 nm) Light-Emitting Diodes Manufacturing by Lift-Off Technique of AlGaAs–GaAs-Heterostructure to Carrier-Substrate
| العنوان: | Investigation of Power IR (850 nm) Light-Emitting Diodes Manufacturing by Lift-Off Technique of AlGaAs–GaAs-Heterostructure to Carrier-Substrate |
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| المؤلفون: | Malevskaya, A. V.Aff1, IDS1063784223080194_cor1, Kalyuzhnyy, N. A., Soldatenkov, F. Y., Levin, R. V., Salii, R. A., Malevskii, D. A., Pokrovskii, P. V., Larionov, V. R., Andreev, V. M. |
| المصدر: | Technical Physics. 68(12):663-667 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 10637842 10906525 |
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| DOI: | 10.1134/s1063784223080194 |