دورية أكاديمية

Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes

التفاصيل البيبلوغرافية
العنوان: Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes
المؤلفون: Cho, Young-Hun, Chung, Seung-Hwan, Park, Se-Rim, Choi, Ji-Soo, Moon, Soo-Young, Lee, Hyung-Jin, Lee, Geon-Hee, Koo, Sang-MoAff1, IDs10854024125512_cor8
المصدر: Journal of Materials Science: Materials in Electronics. 35(14)
قاعدة البيانات: Springer Nature Journals
الوصف
تدمد:09574522
1573482X
DOI:10.1007/s10854-024-12551-2