دورية أكاديمية

Pressure Dependence on the Electrical Properties of SiO2 Gate Oxide Formed by Inductive Coupled Plasma Oxidation

التفاصيل البيبلوغرافية
العنوان: Pressure Dependence on the Electrical Properties of SiO2 Gate Oxide Formed by Inductive Coupled Plasma Oxidation
المؤلفون: Kim, Beom-jong, Kim, Dong-chan, Kim., Yoon-jae, Lim, Han-jin, Kim, Ju-eun, Yi, Wook-yeol, Kim, Dae-hyun, Kim, Bong-hyun, Kim, Young-wan, Kang, Sung-ho, Kim, Yung-seok, Lee, Woo-jun, Nam, Seok-woo, Chung, Chil-hee
المصدر: MRS Online Proceedings Library. 1287(1)
قاعدة البيانات: Springer Nature Journals
الوصف
تدمد:02729172
19464274
DOI:10.1557/opl.2011.1142