دورية أكاديمية
Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
| العنوان: | Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition |
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| المؤلفون: | Dhasiyan, Arun KumarAff1, IDs41598024615019_cor1, Amalraj, Frank WilsonAff1, IDs41598024615019_cor2, Jayaprasad, Swathy, Shimizu, Naohiro, Oda, Osamu, Ishikawa, Kenji, Hori, Masaru |
| المصدر: | Scientific Reports. 14(1) |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 20452322 |
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| DOI: | 10.1038/s41598-024-61501-9 |