دورية أكاديمية
Device Optimization of T-shaped Gate and Polarized Doped Buffer-Engineered InAlN/GaN HEMT for Improved RF/Microwave Performance
| العنوان: | Device Optimization of T-shaped Gate and Polarized Doped Buffer-Engineered InAlN/GaN HEMT for Improved RF/Microwave Performance |
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| المؤلفون: | Sharma, Megha, Chaujar, RishuAff1, IDs13369024087053_cor2 |
| المصدر: | Arabian Journal for Science and Engineering. 49(7):9983-9994 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 2193567X 21914281 |
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| DOI: | 10.1007/s13369-024-08705-3 |