دورية أكاديمية
Improvement of β-Ga2O3-based Schottky barrier UV photodetector by 4H-SiC substrate, intrinsic buffer layer, and graphene surface contact
| العنوان: | Improvement of β-Ga |
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| المؤلفون: | Cherroun, Rima, Meftah, AfakAff1, IDs1085402412786z_cor2, Sengouga, Nouredine, Labed, Madani, Kim, Hojoong, Rim, You SeungAff2, Aff3, Djemaa, Attafi, Meftah, Amjad |
| المصدر: | Journal of Materials Science: Materials in Electronics. 35(16) |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 09574522 1573482X |
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| DOI: | 10.1007/s10854-024-12786-z |