دورية أكاديمية

Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes

التفاصيل البيبلوغرافية
العنوان: Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes
المؤلفون: Yang, Fann-Wei, You, Yu-Siang, Feng, Shih-Wei
المصدر: Nanoscale Research Letters. December 2017 12(1):1-6
قاعدة البيانات: Springer Nature Journals
الوصف
تدمد:19317573
1556276X
DOI:10.1186/s11671-017-2087-8