دورية أكاديمية
4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing
| العنوان: | 4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing |
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| المؤلفون: | Kuebler, L.Aff1, IDs1339102300473w_cor1, Hershkovitz, E., Kouzminov, D., Gossmann, H.-J., Charnvanichborikarn, S., Hatem, C., Kim, H., Jones, K. S. |
| المصدر: | Electronic Materials Letters. 20(3):345-351 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 17388090 20936788 |
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| DOI: | 10.1007/s13391-023-00473-w |