X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer

التفاصيل البيبلوغرافية
العنوان:	X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer
المؤلفون:	Folomeshkin, M. S.^{Aff1, Aff2, IDS1063774522030075_cor1}, Volkovsky, Yu. A.^{Aff1, Aff2}, Prosekov, P. A.^{Aff1, Aff2}, Galiev, G. B., Klimov, E. A., Klochkov, A. N., Pushkarev, S. S., Seregin, A. Yu.^{Aff1, Aff2}, Pisarevsky, Yu. V.^{Aff1, Aff2}, Blagov, A. E.^{Aff1, Aff2}, Kovalchuk, M. V.^{Aff1, Aff2, Aff4}
المصدر:	Crystallography Reports. 67(3):317-322
قاعدة البيانات:	Springer Nature Journals

الوصف
تدمد:	10637745 1562689X
DOI:	10.1134/s1063774522030075