دورية أكاديمية
Effect of oxygen partial pressure on the behavior of Ga-doped ZnO/p-Si heterojunction diodes fabricated by reactive sputtering
| العنوان: | Effect of oxygen partial pressure on the behavior of Ga-doped ZnO/p-Si heterojunction diodes fabricated by reactive sputtering |
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| المؤلفون: | Mondal, PraloyAff1, IDs10854020051697_cor1, Appani, Shravan K., Sutar, D. S., Major, S. S. |
| المصدر: | Journal of Materials Science: Materials in Electronics. 32(4):4248-4257 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 09574522 1573482X |
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| DOI: | 10.1007/s10854-020-05169-7 |