دورية أكاديمية
The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications
| العنوان: | The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications |
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| المؤلفون: | Danielraj, A.Aff1, IDs10825021018162_cor1, Deb, Sanjoy, Mohanbabu, A., Kumar, R. Saravana |
| المصدر: | Journal of Computational Electronics. 21(1):169-180 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 15698025 15728137 |
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| DOI: | 10.1007/s10825-021-01816-2 |