دورية أكاديمية
Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers
| العنوان: | Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers |
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| المؤلفون: | Podoskin, A. A.Aff1, Romanovich, D. N., Shashkin, I. S., Gavrina, P. S., Sokolova, Z. N., Slipchenko, S. O., Pikhtin, N. A. |
| المصدر: | Semiconductors. 53(6):828-832 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 10637826 10906479 |
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| DOI: | 10.1134/s1063782619060162 |