دورية أكاديمية
Quantification of Si Dopant in β-Ga2O3-Based Semiconductor Gas Sensors by Total Reflection X-Ray Fluorescence Spectroscopy (TXRF)
| العنوان: | Quantification of Si Dopant in β-Ga |
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| المؤلفون: | Filatova, D. G.Aff1, Aff2, IDS0020168523140066_cor1, Bogdanova, A. P., Krivetskiy, V. V., Penkina, T. N., Rumyantseva, M. N. |
| المصدر: | Inorganic Materials. 59(14):1433-1436 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 00201685 16083172 |
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| DOI: | 10.1134/s0020168523140066 |