دورية أكاديمية
The Role of Nitrogen-Induced Localization and Defects in InGaAsN (≈ 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition
| العنوان: | The Role of Nitrogen-Induced Localization and Defects in InGaAsN (≈ 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition |
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| المؤلفون: | Kurtz, Steven R., Allerman, A. A., Klem, J. F., Sieg, R. M., Seager, C. H., Jones, E. D. |
| المصدر: | MRS Online Proceedings Library. 692(1) |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. | تدمد: | 02729172 19464274 |
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| DOI: | 10.1557/proc-692-h1.7.1 |