دورية أكاديمية
The Reliability Impact of Bi Doping on the HfO2 Charge-Trapping Layer: A First-Principles Study
| العنوان: | The Reliability Impact of Bi Doping on the HfO |
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| المؤلفون: | Ye, Fengyu, Zhu, Ying, Yuan, Jun-HuiAff1, IDs11664024110660_cor3, Wang, JiafuAff1, Aff2, IDs11664024110660_cor4 |
| المصدر: | Journal of Electronic Materials. 53(7):3756-3767 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. 
Full Text Finder | تدمد: | 03615235 1543186X |
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| DOI: | 10.1007/s11664-024-11066-0 |