دورية أكاديمية
Growth mechanism during selective epitaxy of p-doped SiC using VLS transport
| العنوان: | Growth mechanism during selective epitaxy of p-doped SiC using VLS transport |
|---|---|
| المؤلفون: | Carole, D., Vo-Ha, A., Lazar, M., Thierry-Jebali, N., Tournier, D., Brosselard, P., Thomas, A., Soulière, V., Ferro, G. |
| المصدر: | MRS Online Proceedings Library. 1433(1):95-100 |
| قاعدة البيانات: | Springer Nature Journals |
Find this article in full text from Springer Verlag. | تدمد: | 02729172 19464274 |
|---|---|
| DOI: | 10.1557/opl.2012.1146 |