دورية أكاديمية
Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch
العنوان: | Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch |
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المساهمون: | Geisz, John [National Renewable Energy Lab. (NREL), Golden, CO (United States)] |
المصدر: | Journal of Crystal Growth; 464; C |
وصف الملف: | Medium: ED; Size: p. 20-27 |
URL الوصول: | http://www.osti.gov/scitech/servlets/purl/1348155 |
قاعدة البيانات: | SciTech Connect |
تدمد: | 00220248 |
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DOI: | 10.1016/j.jcrysgro.2016.11.050 |