NbN thin films grown on silicon by molecular beam epitaxy for superconducting detectors
| العنوان: | NbN thin films grown on silicon by molecular beam epitaxy for superconducting detectors |
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| المؤلفون: | Iovan, Adrian, Pedeches, A., Descamps, Thomas, Rotella, H., Florea, I., Semond, F., Zwiller, Val |
| المصدر: | Applied Physics Letters. 123(25) |
| الوصف: | Superconducting nanowire single photon detectors (SNSPDs) made with thin NbN films can reach high performances. While sputtering has been the deposition method of choice, here, we show that ammonia-molecular beam epitaxy (NH3-MBE) can produce pertinent epitaxial cubic NbN thin films on silicon substrates using an AlN buffer. Despite granular morphology and a high density of grain boundaries as well as the presence of rotational twins, Tc = 12.7 K for a 5.6 nm thick film and saturation of internal detection efficiency up to 850 nm are achieved. Morphology and stoichiometry as well as strain have a strong impact on the detector properties, highlighting the importance of a precise control of the growth parameters. These results pave the way for high fabrication yield of SNSPDs on large-scale silicon wafers using epitaxial NbN thin films grown by MBE. |
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| URL الوصول: | https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-342860 https://doi.org/10.1063/5.0175699 |
| قاعدة البيانات: | SwePub |
Find this article in full text from Scitation. | تدمد: | 00036951 10773118 |
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| DOI: | 10.1063/5.0175699 |