High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide
| العنوان: | High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide |
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| المؤلفون: | Guerriero, E., Pedrinazzi, P., Mansouri, Aida, 1988, Habibpour, Omid, 1979, Winters, Michael, 1986, Rorsman, Niklas, 1964, Behnam, A., Carrion, E. A., Pesquera, A., Centeno, A., Zurutuza, A., Pop, E., Zirath, Herbert, 1955, Sordan, R. |
| المصدر: | Scientific Reports. 7(1) |
| الوصف: | The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f(max), cutoff frequency f(T), ratio f(max)/f(T), forward transmission coefficient S-21, and open-circuit voltage gain A(v). All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications. Here we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs: we obtained f(max)/f(T) > 3, A(v) > 30 dB, and S-21 = 12.5 dB (at 10 MHz and depending on the transistor geometry) from S-parameter measurements. A dc characterization of GFETs in ambient conditions reveals good current saturation and relatively large transconductance similar to 600 S/m. The realized GFETs offer the prospect of using graphene in a much wider range of electronic applications which require substantial gain. |
| وصف الملف: | electronic |
| URL الوصول: | https://research.chalmers.se/publication/523409 https://research.chalmers.se/publication/250681 http://publications.lib.chalmers.se/records/fulltext/250681/local_250681.pdf |
| قاعدة البيانات: | SwePub |
| تدمد: | 20452322 20452322 |
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| DOI: | 10.1038/s41598-017-02541-2 |